IRFU410, IRFR410 Datasheet - Intersil Corporation

IRFU410 N-Channel Power MOSFETs

www.DataSheet4U.com IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and.

IRFU410 Features

* 1.5A, 500V

* rDS(ON) = 7.000Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* High Input Impedance

* 150oC Operating Temperature

* Related Literature - TB334 “Guidelines for Sol

IRFR410_IntersilCorporation.pdf

IRFU410 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFU410, IRFR410. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFU410, IRFR410

Manufacturer:

Intersil Corporation

File Size:

250.14 KB

Description:

N-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRFU410, IRFR410.
Please refer to the document for exact specifications by model.

IRFU410 Distributor

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IRFU410 IRFR410 N-Channel Power MOSFETs Intersil Corporation