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IRFU4105PBF - HEXFET Power MOSFET

This page provides the datasheet information for the IRFU4105PBF, a member of the IRFR4105PBF HEXFET Power MOSFET family.

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • ne position indicates "Lead-Free" PART NUMBER.

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Datasheet preview – IRFU4105PBF

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Full PDF Text Transcription

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PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 55V G S RDS(on) = 0.045Ω ID = 27A… Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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