Description
Data Sheet IRFR420, IRFU420 January 2002 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field.
Features
* 2.5A, 500V
* rDS(ON) = 3.000Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature
- TB334 “Guidelines fo
Applications
* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405.
Ordering Info
