Datasheet4U Logo Datasheet4U.com

IRFU420B - 500V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 2.3A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • D ◀ ▲.
  • G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

📥 Download Datasheet

Datasheet preview – IRFU420B

Datasheet Details

Part number IRFU420B
Manufacturer Fairchild
File Size 649.04 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet IRFU420B Datasheet
Additional preview pages of the IRFU420B datasheet.

📁 Similar Datasheet

  • IRFU420B - 500V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFU420 - Power MOSFET (Fairchild Semiconductor)
  • IRFU420 - N-Channel Power MOSFETs (Intersil)
  • IRFU420 - Power MOSFET (IRF)
  • IRFU420 - N-Channel Power MOSFETs (Intersil Corporation)
  • IRFU420 - Power MOSFET (Vishay Siliconix)
  • IRFU420 - N-Channel MOSFET (INCHANGE)
  • IRFU420A - Power MOSFET (Samsung)
  • IRFU420A - SMPS MOSFET (International Rectifier)
  • IRFU410 - 1.5A / 500V / 7.000 Ohm / N-Channel Power MOSFETs (Intersil)
Other Datasheets by Fairchild

Full PDF Text Transcription

Click to expand full text
IRFR420B / IRFU420B November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features • • • • • • 2.3A, 500V, RDS(on) = 2.
Published: |