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IRFP250 Datasheet - Fairchild

IRFP250 N-Channel Power MOSFET

Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors req.

IRFP250 Features

* 33A, 200V

* rDS(ON) = 0.085Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFP250 Datasheet (97.59 KB)

IRFP250 Datasheet Preview — Preview of IRFP250 PDF

Datasheet Details

Part number:

IRFP250

Manufacturer:

Fairchild

File Size:

97.59 KB

Description:

N-channel power mosfet.

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IRFP250 N-Channel Power MOSFET Fairchild

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