IRFP250A - Advanced Power MOSFET
IRFP250A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 IRFP250A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 32 A TO-3P 2 3 1.Gate 2. Drain 3. Sourc
