IRFU410A Datasheet - Fairchild

IRFU410A Advanced Power MOSFET

Advanced Power MOSFET IRFU410A IRFU410A BVDSS = 520 V RDS(on) = 10.0 Ω ID = 1.2 A TO-220 Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Curre.

IRFU410A_Fairchild.pdf