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Advanced Power MOSFET
IRFU410A
IRFU410A
BVDSS = 520 V RDS(on) = 10.0 Ω ID = 1.2 A
TO-220
Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
IRFU410A Datasheet
