IRFU120, IRFR120 Datasheet - Intersil Corporation

IRFU120 N-Channel Power MOSFETs

IRFR120, IRFU120 Data Sheet July 1999 File Number 2414.2 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high pow.

IRFU120 Features

* 8.4A, 100V

* rDS(ON) = 0.270Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFR120_IntersilCorporation.pdf

IRFU120 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFU120, IRFR120. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFU120, IRFR120

Manufacturer:

Intersil Corporation

File Size:

56.00 KB

Description:

N-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRFU120, IRFR120.
Please refer to the document for exact specifications by model.

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TAGS

IRFU120 IRFR120 N-Channel Power MOSFETs Intersil Corporation

IRFU120 Distributor