RFM3N45 Datasheet - Intersil Corporation

RFM3N45 N-Channel Power MOSFET

RFM3N45, RFM3N50, RFP3N45, RFP3N50 Semiconductor Data Sheet October 1998 File Number 1384.2 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits..

RFM3N45 Features

* 3A, 450V and 500V

* rDS(ON) = 3Ω

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title () /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark Symbol D Ordering Information PART NUMBER RFM3N45 RFM3N50 RFP3N45

RFM3N45_IntersilCorporation.pdf