* 4A, 350V and 400V
* rDS(ON) = 2.000Ω
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ [ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect transistors designed for applications such 35,
RFP4N35
Intersil Corporation
38.53 KB
N-channel power mosfet.
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Semiconductor
Data Sheet
October 1998
File Number 1491.3
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs
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