RFP8N20L Datasheet (Intersil Corporation)

RFP8N20L, N-Channel MOSFET

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RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers.

This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby faci

RFP8N20L Features

* 8A, 200V

* rDS(ON) = 0.600Ω

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* Compatible with Automotive Drive Requirements

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds