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FRS9230D 4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs

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Description

FRS9230D, FRS9230R, FRS9230H June 1998 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA .
Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1.

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Datasheet Specifications

Part number
FRS9230D
Manufacturer
Intersil
File Size
49.70 KB
Datasheet
FRS9230D_IntersilCorporation.pdf
Description
4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs

Features

* 4A, -200V, RDS(on) = 1.32Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec

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