FRS9230H 4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs

Intersil

Description

FRS9230D, FRS9230R, FRS9230H June 1998 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA .
Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1.

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Datasheet Specifications

Part number: FRS9230H
Manufacturer: Intersil
File Size: 49.70 KB
Datasheet: FRS9230H_IntersilCorporation.pdf
Description: 4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs

Features

* 4A, -200V, RDS(on) = 1.32Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec

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FRS9230H -200V 1.32 Ohm Rad Hard P-Channel Power MOSFETs Intersil

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