MCTV35P60F1D 35A / 600V P-Type MOS Controlled Thyristor

Intersil

Description

Semiconductor MCTV35P60F1D P-Type MOS Controlled with Anti-Parallel Diode Package JEDEC STYLE TO-247 April 1999 PROCE S AWN NS 35A, 600V ITHDR DE.
The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.

📥 Download Datasheet

MCTV35P60F1D Datasheet Preview — Preview of MCTV35P60F1D PDF

Datasheet Specifications

Part number: MCTV35P60F1D
Manufacturer: Intersil
File Size: 53.90 KB
Datasheet: MCTV35P60F1D_IntersilCorporation.pdf
Description: 35A / 600V P-Type MOS Controlled Thyristor

Features

* 35A, -600V
* VTM = -1.35V (Max) at I = 35A and +150oC
* 800A Surge Current Capability
* 800A/µs di/dt Capability
* MOS Insulated Gate Control
* 50A Gate Turn-Off Capability at +150oC

MCTV35P60F1D Distributors

📁 Related Datasheet

MCT020A12TW176220PML MCT028A12TW240320PL MCT04P06 MCT0603 MCT0603AT MCT06P10

📌 All Tags

MCTV35P60F1D 35A 600V P-Type MOS Controlled Thyristor Intersil

Intersil MCTV35P60F1D-like datasheet