MCTV75P60E1 - 75A / 600V P-Type MOS Controlled Thyristor

Intersil

MCTV75P60E1 Description

Semiconductor April 1999 PRO CE IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O MCTV75P60E1, MCTA75P60E1 JEDEC STYLE TO-247 5-LEAD ANODE AN.
The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.

MCTV75P60E1 Features

* 75A, -600V
* VTM = -1.3V(Maximum) at I = 75A and +150oC
* 2000A Surge Current Capability
* 2000A/µs di/dt Capability
* MOS Insulated Gate Control

📥 Download Datasheet

MCTV75P60E1 Datasheet Preview — Preview of MCTV75P60E1 PDF

Datasheet Details

Part number: MCTV75P60E1
Manufacturer: Intersil
File Size: 50.11 KB
Datasheet: MCTV75P60E1_IntersilCorporation.pdf
Description: 75A / 600V P-Type MOS Controlled Thyristor

📁 Related Datasheet

MCT020A12TW176220PML - LCM (MIDAS)
MCT028A12TW240320PL - LCD (MIDAS)
MCT04P06 - P-Channel MOSFET (MCC)
MCT0603 - Professional Thin Film Chip Resistors (Vishay)
MCT0603AT - Professional Thin Film Chip Resistor (Vishay Siliconix)
MCT06P10 - P-Channel MOSFET (MCC)
MCT1413 - High Voltage / High Current Darlington Transistor Array (Motorola)
MCT1413B - High Voltage / High Current Darlington Transistor Array (Motorola)

📌 All Tags

75A 600V P-Type MOS Controlled Thyristor Intersil

Intersil MCTV75P60E1-like datasheet

MCTV35P60F1D - 35A / 600V P-Type MOS Controlled Thyristor
MCTV65P100F1 - 65A / 1000V P-Type MOS Controlled Thyristor
MCT3A65P100F2 - 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
MCT3D65P100F2 - 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
MCTA65P100F1 - 65A / 1000V P-Type MOS Controlled Thyristor
MCTA75P60E1 - 75A / 600V P-Type MOS Controlled Thyristor (MCT)

MCTV75P60E1 Stock/Price