FSF150D - N-Channel Power MOSFETs

Intersil Corporation

FSF150D Datasheet Preview — Preview of FSF150D PDF

Datasheet Details

Part number	FSF150D
Manufacturer	Intersil Corporation
File Size	45.32 KB
Description	N-Channel Power MOSFETs
Datasheet	FSF150D_IntersilCorporation.pdf

FSF150D Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

25A, 100V, rDS(ON) = 0.070Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 7.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spe.

📁 FSF150D Similar Datasheet

FSF10A20 - Low Forward Voltage Drop (Nihon Inter Electronics)
FSF10A20B - FRD (Nihon Inter Electronics)
FSF10A40 - FRD (Nihon Inter Electronics)
FSF10A40B - FRD (Nihon Inter Electronics)
FSF10A60 - FRD (ETC)
FSF10A60B - Low Forward Voltage Drop (Nihon Inter Electronics)
FSF10B60 - FRED (Nihon Inter Electronics)
FSF10B60B - FRED (Nihon Inter Electronics)

Other Datasheets by Intersil Corporation

FSF150R - N-Channel Power MOSFETs
FSF055D - N-Channel Power MOSFETs
FSF055R - N-Channel Power MOSFETs
FSF055R4 - N-Channel Power MOSFETs
FSF250D - N-Channel Power MOSFETs
FSF250R - N-Channel Power MOSFETs

Published: Mar 23, 2005 |