ASDX005, ASDXxxx 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT

Invensys

Description

FCD9N60NTM N-Channel MOSFET FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ .
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it.

📥 Download Datasheet

ASDX005 Datasheet Preview — This datasheet PDF includes multiple part numbers: ASDX005, ASDXxxx. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: ASDX005, ASDXxxx
Manufacturer: Invensys
File Size: 104.43 KB
Datasheet: ASDXxxx_ETC.pdf
Description: 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
Note: This datasheet PDF includes multiple part numbers: ASDX005, ASDXxxx.
Please refer to the document for exact specifications by model.

Features

* RDS(on) = 0.330Ω ( Typ. )@ VGS = 10V, ID = 4.5A
* Ultra Low Gate Charge (Typ. Qg = 17.8nC)
* Low Effective Output Capacitance
* 100% Avalanche Tested

Applications

* D G S D G D-PAK (TO-252) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness

ASDX005 Distributors

📁 Related Datasheet

ASDXxxx ASD03 ASD05 ASD05H ASD06 ASD07

📌 All Tags

ASDXxxx PSI THROUGH 100 PSI PRESSURE TRANSDUCERS SenSym ICT Invensys

Invensys ASDX005-like datasheet