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ASDX015 - 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT

Download the ASDX015 datasheet PDF. This datasheet also covers the ASDXxxx variant, as both devices belong to the same 0 to 1 psi through 0 to 100 psi pressure transducers sensym ict family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 820 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 13 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 49 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ASDXxxx_ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ASDX015
Manufacturer Invensys
File Size 104.43 KB
Description 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
Datasheet download datasheet ASDX015 Datasheet

Full PDF Text Transcription for ASDX015 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ASDX015. For precise diagrams, and layout, please refer to the original PDF.

FCD900N60Z — N-Channel SuperFET® II MOSFET December 2013 FCD900N60Z N-Channel SuperFET® II MOSFET 600 V, 4.5 A, 900 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 820 ...

View more extracted text
0 V, 4.5 A, 900 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 820 mΩ • Ultra Low Gate Charge (Typ. Qg = 13 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF) • 100% Avalanche Tested • ESD Improved Capacity • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.