ASDX030, ASDXxxx Datasheet - Invensys

ASDX030, ASDXxxx, 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT

FCH041N60F * N-Channel SuperFET® II FRFET® MOSFET December 2013 FCH041N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 76 A, 41 mΩ

Features

* 650 V @ TJ = 150°C
* Typ.
RDS(on) = 36 mΩ
* Ultra Low Gate Charge (Typ.
Qg = 277 nC)
* Low Effective Output Capacitance (Typ.
Coss(eff.
) = 748 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
D G G D S TO-247 S Absolute Maximum Ratings TC = 25oC unless

ASDXxxx_ETC.pdf