CJD30N10 Datasheet - JCET

CJD30N10 N-Channel Power MOSFET

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. TO-256 1. GATE 2. DRAIN 1 23 3. SOURCE Desighed for high voltage, high speed switching applica.

CJD30N10 Features

* High density cell design for ultra low RDS(on)

* Special process technology for high ESD capability

* Fully characterized avalanche voltage and current

* Excellent package for good heat dissipation

* Good stability and uniformity with high EAS APPLICATIONS

* Hard swit

CJD30N10 Datasheet (526.22 KB)