CJD30N10 N-Channel Power MOSFET

JCET

Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-256 Plastic-Encapsulate MOSFETS CJ'30N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX .
This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

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Datasheet Specifications

Part number: CJD30N10
Manufacturer: JCET
File Size: 526.22 KB
Datasheet: CJD30N10-JCET.pdf
Description: N-Channel Power MOSFET

Features

* High density cell design for ultra low RDS(on)
* Special process technology for high ESD capability
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation

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CJD30N10 N-Channel Power MOSFET JCET

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