CJD30N10 - N-Channel Power MOSFET

JCET

CJD30N10 Datasheet Preview — Preview of CJD30N10 PDF

Datasheet Details

Part number	CJD30N10
Manufacturer	JCET
File Size	526.22 KB
Description	N-Channel Power MOSFET
Datasheet	CJD30N10-JCET.pdf

CJD30N10 Product details

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode fast recovery time.TO-256 1. GATE 2. DRAIN 1 23 3. SOURCE Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.

Features

High density cell design for ultra low RDS(on).
Special process technology for high ESD capability.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.
Good stability and uniformity with high EAS.

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Published: Dec 21, 2016 |