* High density cell design for ultra low RDS(on)
* Special process technology for high ESD capability
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation
* Good stability and uniformity with high EAS APPLICATIONS
* Hard swit
CJD30N10 Datasheet (526.22 KB)
CJD30N10
JCET
526.22 KB
N-channel power mosfet.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-256 Plastic-Encapsulate MOSFETS
CJ'30N10 N-Channel Power MOSFET
V(BR)DSS
100V
RDS(on)MAX
.
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