CJD30N10 Datasheet (JCET) - N-Channel Power MOSFET

CJD30N10, N-Channel Power MOSFET

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

TO-256 1.

GATE 2.

DRAIN 1 23 3.

SOURCE Desighed for high voltage, high speed switching applica

CJD30N10 Features

* High density cell design for ultra low RDS(on)

* Special process technology for high ESD capability

* Fully characterized avalanche voltage and current

* Excellent package for good heat dissipation

* Good stability and uniformity with high EAS APPLICATIONS

* Hard swit