CJP80N03 - N-Channel Power MOSFET
CJP80N03 Features
* 1. GATE 2. DRAIN 3. SOURCE 123 z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Excellent package for good heat dissipation z Special process technology for high ESD capability z Good stability and uniformity with high EAS APPLICATIONS z Po
