Datasheet Details
| Part number | CJP85N80 |
|---|---|
| Manufacturer | JCET |
| File Size | 825.95 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
|
| Part number | CJP85N80 |
|---|---|
| Manufacturer | JCET |
| File Size | 825.95 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
|
The CJP85N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications.TO-220-3L-C 1. GATE 2. DRAIN FEATURE Advanced trench process technology Special designed for convertors and power controls High density cell design for ultra low RDS(on) Fully characterized avalanche voltage and current Fast s
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