* z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Excellent package for good heat dissipation z Special process t
CJP80N04 Datasheet (589.60 KB)
CJP80N04
JCET
589.60 KB
N-channel power mosfet.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP80N04 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID.
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