3DD304X Datasheet, Transistor, JILIN SINO-MICROELECTRONICS

3DD304X Features

• Transistor z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD304X-O-C-N-B Halogen Free NO Marki

PDF File Details

Part number:

3DD304X

Manufacturer:

JILIN SINO-MICROELECTRONICS

File Size:

398.69kb

Download:

📄 Datasheet

Description:

High voltage fast-switching npn power transistor. of Changes 、 ：200910C 5/5 Free Datasheet http://www.datasheet4u.com/

3DD304X Application

• Applications z Energy-saving ligh z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power a

TAGS

3DD304X

JILIN SINO-MICROELECTRONICS

📁 Related Datasheet

3DD3040A1 - Silicon NPN Transistor (Huajing Microelectronics)
.

3DD3040A3 - Silicon NPN Transistor (Huajing Microelectronics)
.

3DD3040A4 - Silicon NPN bipolar transistor (Huajing Microelectronics)
NPN 3DD3040 A4 ○R 3DD3040 A4 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot（TC=25℃） 450 2 30 V .

3DD3040A6 - Silicon NPN Transistor (Huajing Microelectronics)
.

3DD3040A7 - Silicon NPN Transistor (Huajing Microelectronics)
.

3DD3010A1 - Silicon NPN Transistor (Huajing Microelectronics)
NPN ○R 3DD3010A1 1 ： 3DD3010A1 NPN ，， ，、 。 ：TO-92 ， RoHS 。 VCEO IC Ptot （Ta=25℃） 2 ： TO-92 480 0.5 0.8 V A W ● ● ● ● ● 1 2 3 1. B.

3DD3015A1 - Silicon NPN Transistor (Huajing Microelectronics)
NPN ○R 3DD3015A1 1 ： 3DD3015A1 NPN ，， ，、 BVCEO 。 ：TO-92， RoHS 。 IC Ptot （Ta=25℃） 2 ： TO-92 450 1 0.8 V A W ● ● ● ● ● 3 ： 、， 。 1 2.

3DD3015A1-H - Silicon NPN bipolar transistor (Huajing Microelectronics)
NPN 3DD3015 A1-H ○R 3DD3015 A1-H NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Ta=25℃） 450 1 0.8 V A W TO-92 -10.

3DD3015A3 - Silicon NPN Transistor (Huajing Microelectronics)
NPN 3DD3015 A3 ○R 3DD3015 A3 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Tc=25℃） 450 1.2 25 V A W TO-251 -10℃～40.

3DD301B - Silicon Power Transistor (Inchange)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(.