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HP10N60 Datasheet - JINGJIAZHEN

HP10N60 - 600V N-Channel MOSFET

HF10N60 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 4.75 A 2.5 Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse

HP10N60-JINGJIAZHEN.pdf

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Datasheet Details

Part number:

HP10N60

Manufacturer:

JINGJIAZHEN

File Size:

1.67 MB

Description:

600v n-channel mosfet.

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