BC347 Datasheet, transistor equivalent, Jiangsu Changjiang Electronics

BC347 Features

• Transistor Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© www.DataSheet4U.com Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range T J

PDF File Details

Part number:

BC347

Manufacturer:

Jiangsu Changjiang Electronics

File Size:

364.36kb

Download:

📄 Datasheet

Description:

Transistor.

TAGS

BC347

Jiangsu Changjiang Electronics

📁 Related Datasheet

BC300 - (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS (CDIL)
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC.

BC300 - NPN Silicon Transistor (Micro Electronics)
.

BC301 - (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS (CDIL)
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC.

BC301 - NPN Silicon Transistor (Micro Electronics)
.

BC301N-D - Gas Discharge Tube (Bencent)
Gas Discharge Tube Features Small Size Design EIA 1812 4.5×3.2×2.7mm Current Handling Capability 2,000A @ 8/20μ s Low Capacitance and Insertion Loss F.

BC302 - (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS (CDIL)
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC.

BC302 - Bipolar NPN Device (Seme LAB)
BC302 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. .

BC302 - NPN Silicon Transistor (Micro Electronics)
.

BC303 - PNP Silicon Transistor (Micro Electronics)
.

BC303 - Bipolar PNP Device (Seme LAB)
BC303 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.4.