HBR30100HF
Jilin Sino
396.84kb
Schottky barrier diode. of Changes 2010-02-03 200911F 201002G Added TO-220HF. (Rev.):201002G 8/8
TAGS
📁 Related Datasheet
HBR30100HFR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR30100 - Schottky Barrier Rectifier
(Inchange Semiconductor)
Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
HBR30100 - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR30100AB - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR30100ABR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR30100F - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR30100FR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR30100PT - Schottky Barrier Rectifier
(Inchange Semiconductor)
Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
HBR30100Z - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR30100ZR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15)A
100 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.