Download Datasheet (216.40 KB)
HBR30100PT
Inchange Semiconductor
216.40 KB
Schottky barrier rectifier.
Schottky Barrier Rectifier
FEATURES *Common Cathode Structure *Low Power Loss,high Efficiency *High .
Operating Junction Temperature *Guarding for Overvoltage protection，High reliability *100% avalanche.
📁 Related Datasheet
HBR30100 - Schottky Barrier Rectifier
(Inchange Semiconductor)
Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
HBR30100 - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30（2×15）A
100 V 175 ℃ 0.75V （@Tj=125℃）
z z
APPLICAT.
HBR30100AB - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30（2×15）A
100 V 175 ℃ 0.75V （@Tj=125℃）
z z
APPLICAT.
HBR30100ABR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30（2×15）A
100 V 175 ℃ 0.75V （@Tj=125℃）
z z
APPLICAT.
HBR30100F - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30（2×15）A
100 V 175 ℃ 0.75V （@Tj=125℃）
z z
APPLICAT.
HBR30100FR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR30100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30（2×15）A
100 V 175 ℃ 0.75V （@Tj=125℃）
z z
APPLICAT.
