HBR30100 Datasheet, Rectifier, Inchange Semiconductor

HBR30100 Features

• Rectifier
• Common Cathode Structure
• Low Power Loss,high Efficiency
• High Operating Junction Temperature
• Guarding for Overvoltage protection，High reliability

PDF File Details

Part number:

HBR30100

Manufacturer:

Inchange Semiconductor

File Size:

212.82kb

Download:

📄 Datasheet

Description:

Schottky barrier rectifier.

HBR30100 Application

• Applications
• High Frequency switch power Supply
• Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATING

TAGS

HBR30100

Inchange Semiconductor

📁 Related Datasheet

HBR30100 - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.

HBR30100AB - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.

HBR30100ABR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.

HBR30100F - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.

HBR30100FR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.

HBR30100HF - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.

HBR30100HFR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.

HBR30100PT - Schottky Barrier Rectifier (Inchange Semiconductor)
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv.

HBR30100Z - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.

HBR30100ZR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.