Datasheet4U Logo Datasheet4U.com

13009SDL Bipolar Junction Transistor

13009SDL Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.13009SDL Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1．APPLICATION Mainly u.

13009SDL Features

* Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base

📥 Download Datasheet

Preview of 13009SDL PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
13009SDL
Manufacturer
Jingdao
File Size
121.57 KB
Datasheet
13009SDL-Jingdao.pdf
Description
Bipolar Junction Transistor

📁 Related Datasheet

  • 13009H - NPN power transistor (STMicroelectronics)
  • 13009L - KSE13009L (Fairchild Semiconductor)
  • 1300 - Crystal Clock Oscillators (Nihon Dempa Kogyo)
  • 1300-102-4xx - 2.54mm IDC Connector (Methode Electronics)
  • 13001 - NPN Epitaxial Silicon Transistor (Elite)
  • 13001S - Low-frequency amplification environment rated bipolar transistors (ETC)
  • 13001S8D - NPN Transistor (JTD)
  • 13002AG - NPN SILICON TRANSISTOR (Unisonic Technologies)

📌 All Tags

Bipolar Junction Transistor Jingdao
Jingdao 13009SDL-like datasheet