13001 - NPN Epitaxial Silicon Transistor

Datasheet Summary

Features

Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW o o C C 1. Emitter 2. Collector 3. Base Electrical Characteristics (TA=25oC) Characteristic Collector-Base Breakdown.

Elite

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Datasheet Details

Part number	13001
Manufacturer	Elite
File Size	60.13 KB
Description	NPN Epitaxial Silicon Transistor
Datasheet	13001 Datasheet
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13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW o o C C 1. Emitter 2. Collector 3.

Published: Mar 31, 2014 |