Datasheet4U Logo Datasheet4U.com

13001 - NPN Epitaxial Silicon Transistor

13001 Description

13001 NPN Epitaxial Silicon Transistor .

13001 Features

* Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO V

📥 Download Datasheet

Preview of 13001 PDF

Datasheet Details

Part number
13001
Manufacturer
Elite
File Size
60.13 KB
Datasheet
13001-Elite.pdf
Description
NPN Epitaxial Silicon Transistor

📁 Related Datasheet

  • 13001-2 - NPN power transistor (Jingdao)
  • 13001-A - NPN power transistor (Jingdao)
  • 13001S - Low-frequency amplification environment rated bipolar transistors (ETC)
  • 13001S8D - NPN Transistor (JTD)
  • 1300 - Crystal Clock Oscillators (Nihon Dempa Kogyo)
  • 1300-102-4xx - 2.54mm IDC Connector (Methode Electronics)
  • 13002AG - NPN SILICON TRANSISTOR (Unisonic Technologies)
  • 13002AH - NPN SILICON TRANSISTOR (Unisonic Technologies)

📌 All Tags

NPN Epitaxial Silicon Transistor Elite
Elite 13001-like datasheet

13001 Stock/Price