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13001S8D - NPN Transistor

13001S8D Description

SHENZHEN JTD ELECTRONICS CO.,LTD 13001S8D .

13001S8D Applications

* TO-92 LIMMITING VALUES(Tj=25℃ Unless Otherwise Stated) Parameter Symbol Value Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current Ic 0.5 A Total Power Dissipattion Pc 0.65 W Storage Temperature Tstg -6

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Datasheet Details

Part number
13001S8D
Manufacturer
JTD
File Size
60.87 KB
Datasheet
13001S8D-JTD.pdf
Description
NPN Transistor

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