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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.)
KDV258E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CE 1
CATHODE MARK B A
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 15 150
-55 150
UNIT V
2 D
1. ANODE 2. CATHODE
F
DIM A B C D E F
MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C1V C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz
VR=1V, f=470MHz
MIN. 15 19.0 8.5 2.0 -
TYP.
KDV258E Datasheet
