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KDV386S

SILICON EPITAXIAL PLANAR DIODE

KDV386S Features

* High Capacitance Ratio : C1V/C4V =1.8 (Min.) Low Series Resistance. : rS=0.9 (Max.) Good C-V Linearity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V KDV386S VARIABLE CAPACITANCE DIODE SILI

KDV386S Datasheet (343.28 KB)

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Datasheet Details

Part number:

KDV386S

Manufacturer:

KEC

File Size:

343.28 KB

Description:

Silicon epitaxial planar diode.

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KDV386S SILICON EPITAXIAL PLANAR DIODE KEC

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