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KF1N60I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF1N60I Features

* VDSS= 600V, ID= 1A RDS(ON)=10 (Max) @VGS = 10V Qg(typ) = 4.0nC EAS=45mJ MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Pe

KF1N60I Datasheet (915.25 KB)

Preview of KF1N60I PDF

Datasheet Details

Part number:

KF1N60I

Manufacturer:

KEC

File Size:

915.25 KB

Description:

N channel mos field effect transistor.

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KF1N60I CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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