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KF1N60L

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF1N60L Features

* VDSS= 600V, ID= 0.5A RDS(ON)=10 (Max) @VGS = 10V Qg(typ) = 4.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS TC=25 Drain Current TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Dio

KF1N60L Datasheet (873.94 KB)

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Datasheet Details

Part number:

KF1N60L

Manufacturer:

KEC

File Size:

873.94 KB

Description:

N channel mos field effect transistor.

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KF1N60L CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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