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KF5N53I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF5N53I Features

* VDSS= 525V, ID= 4.1A Drain-Source ON Resistance : RDS(ON)=1.5 Qg(typ) = 12nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Aval

KF5N53I Datasheet (830.19 KB)

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Datasheet Details

Part number:

KF5N53I

Manufacturer:

KEC

File Size:

830.19 KB

Description:

N channel mos field effect transistor.

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TAGS

KF5N53I CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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