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KF5N60D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF5N60D Features

* VDSS= 600V, ID= 3.5A Drain-Source ON Resistance : RDS(ON)=2.0 Qg(typ) = 11nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Aval

KF5N60D Datasheet (383.30 KB)

Preview of KF5N60D PDF

Datasheet Details

Part number:

KF5N60D

Manufacturer:

KEC

File Size:

383.30 KB

Description:

N channel mos field effect transistor.

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KF5N60D CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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