Part number:
KF5N65I
Manufacturer:
KEC
File Size:
479.60 KB
Description:
N channel mos field effect transistor.
* VDSS= 650V, ID= 4.4A Drain-Source ON Resistance : RDS(ON)=1.75 Qg(typ) = 14.5nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive A
KF5N65I
KEC
479.60 KB
N channel mos field effect transistor.
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