Part number:
KF5N60I
Manufacturer:
KEC
File Size:
383.30 KB
Description:
N channel mos field effect transistor.
* VDSS= 600V, ID= 3.5A Drain-Source ON Resistance : RDS(ON)=2.0 Qg(typ) = 11nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Aval
KF5N60I
KEC
383.30 KB
N channel mos field effect transistor.
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