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KF5N60I, KF5N60D N-Channel MOSFET

KF5N60I Description

SEMICONDUCTOR TECHNICAL DATA KF5N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and.

KF5N60I Features

* VDSS= 600V, ID= 3.5A Drain-Source ON Resistance : RDS(ON)=2.0 Qg(typ) = 11nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Aval

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This datasheet PDF includes multiple part numbers: KF5N60I, KF5N60D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KF5N60I, KF5N60D
Manufacturer
KEC
File Size
383.30 KB
Datasheet
KF5N60D-KEC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: KF5N60I, KF5N60D.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET KEC
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