KF60N06P Datasheet - KEC

KF60N06P N CHANNEL MOS FIELD EFFECT TRANSISTOR

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology, DC/DC Converters and switc.

KF60N06P Features

* VDSS = 60V, ID = 60A Drain-Source ON Resistance : RDS(ON) =13.2m (Max.) @VGS = 10V Qg(typ.) = 48nC D N N A KF60N06P N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F E G B Q DIM MILLIMETERS _ 0.2 9.9 + A B C D E I K M L J H P F G H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.

KF60N06P_KEC.pdf