KF6N60P N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KF6N60P
Manufacturer: KEC
File Size: 1.48 MB
Datasheet: KF6N60P-KEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS(Min. )= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ. ) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/

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KF6N60P N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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