KF6N60F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF6N60F Features
* VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/
