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KF6N60F, KF6N60P Datasheet - KEC

KF6N60F N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KF6N60F Features

* VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/

KF6N60P-KEC.pdf

This datasheet PDF includes multiple part numbers: KF6N60F, KF6N60P. Please refer to the document for exact specifications by model.
KF6N60F Datasheet Preview Page 2 KF6N60F Datasheet Preview Page 3

Datasheet Details

Part number:

KF6N60F, KF6N60P

Manufacturer:

KEC

File Size:

1.48 MB

Description:

N-channel mos field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: KF6N60F, KF6N60P.
Please refer to the document for exact specifications by model.

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TAGS

KF6N60F KF6N60P N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

KF6N60F Distributor