KF7N50P Datasheet | KEC

Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. Features VDSS(Min.)= 500V, ID= 7A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16n C MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 SYMBOL VDSS VGSS RATING KF7N50P KF7N50F 500 30 7 7- 4.4 4.4- IDP 21 21- EAS 180 EAR 4 dv/dt 100 41.7 PD 0.8 0.33 Maximum Junction Temperature Storage Temperature Range Tj Tstg 150 -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case Rth JC Thermal Resistance, Junction-to...