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KF8N60F, KF8N60P Datasheet - KEC

KF8N60F N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KF8N60F Features

* VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF8N60P KF8N60F Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy

KF8N60P-KEC.pdf

This datasheet PDF includes multiple part numbers: KF8N60F, KF8N60P. Please refer to the document for exact specifications by model.
KF8N60F Datasheet Preview Page 2 KF8N60F Datasheet Preview Page 3

Datasheet Details

Part number:

KF8N60F, KF8N60P

Manufacturer:

KEC

File Size:

75.94 KB

Description:

N-channel mos field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: KF8N60F, KF8N60P.
Please refer to the document for exact specifications by model.

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TAGS

KF8N60F KF8N60P N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

KF8N60F Distributor