KF8N60P N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA KF8N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charact.

📥 Download Datasheet

KF8N60P Datasheet Preview — Preview of KF8N60P PDF

Datasheet Specifications

Part number: KF8N60P
Manufacturer: KEC
File Size: 75.94 KB
Datasheet: KF8N60P-KEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ. )= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF8N60P KF8N60F Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy

KF8N60P Distributors

📁 Related Datasheet

KF80 KF80BDT-TR KF85 KF8F213

📌 All Tags

KF8N60P N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

KEC KF8N60P-like datasheet