KTD600K - EPITAXIAL PLANAR NPN TRANSISTOR
KTD600K Features
* High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTB631K. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC ICP Collector P
