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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222U/2222AU.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2907U KTN2907AU
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-40
-60 V
Emitter-Base Voltage
VEBO
-5
V
Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
IC PC Tj
-600 mA 100 mW 150
Storage Temperature Range
Tstg
-55 150
KTN2907U/AU
EPITAXIAL PLANAR PNP TRANSISTOR
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.
KTN2907U Datasheet
