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KU310N10F, KU310N10P N-Channel MOSFET

KU310N10F Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristic.

KU310N10F Features

* VDSS= 100V, ID= 34A Drain-Source ON Resistance : RDS(ON)=31m (Max. ) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU310N10P KU310N10F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 V 20 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche

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This datasheet PDF includes multiple part numbers: KU310N10F, KU310N10P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KU310N10F, KU310N10P
Manufacturer
KEC
File Size
1.25 MB
Datasheet
KU310N10P-KEC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: KU310N10F, KU310N10P.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET KEC
KEC KU310N10F-like datasheet