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KU3600N10D N-Channel MOSFET

KU3600N10D Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristic.

KU3600N10D Features

* VDSS(Min. )= 100V, ID= 5A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ. ) =4.2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive

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Datasheet Details

Part number
KU3600N10D
Manufacturer
KEC
File Size
554.22 KB
Datasheet
KU3600N10D-KEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET KEC
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